STF15N80K5

STF15N80K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-STF15N80K5
  • Package: TO-220-3 Full Pack
  • Datasheet: pdf
  • Stock: 7308
  • Description: STF15N80K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH5™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Base Part Number STF15
Number of Elements 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection ISOLATED
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 375m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 17.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 14A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 56A
Height 16.4mm
Length 10.4mm
Width 4.6mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Description


The STF15N80K5 is an N-channel 800 V, 0.3 Ω typ., 14 A MDmesh? K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages. These N-channel Power MOSFETs with a very high voltage were created using MDmeshTM K5 technology and a cutting-edge, custom vertical structure. As a result, on-resistance is drastically reduced, and ultra-low gate charges are produced for applications demanding a high level of efficiency and higher power density.



Features


  • Ultra-low gate charge

  • 100% avalanche tested

  • Zener-protected

  • Industry's lowest RDS(on) x area

  • Industry's best figure of merit (FOM)



Applications


  • Switching applications

  • Uninterruptible Power Supplies (UPS)

  • Small motor control

  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications


In Stock

Please send RFQ , we will respond immediately.