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| Parameters | |
|---|---|
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 430mOhm |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STF12 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 25W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 25W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 22.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 430m Ω @ 4.3A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Rise Time | 9.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 24 ns |
| Turn-Off Delay Time | 15.6 ns |
| Continuous Drain Current (ID) | 8.5A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 650V |
| Height | 16.4mm |
| Length | 10.4mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 17 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-5 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | MDmesh™ V |
| JESD-609 Code | e3 |
The STF12N65M5 is an N-channel 650 V, 0.39 ?, 8.5 A MDmesh? V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK. These products are N-channel MDmesh? V Power MOSFETs built on a cutting-edge proprietary vertical manufacturing technique with the well-known PowerMESH? horizontal layout architecture from STMicroelectronics. The resulting product is especially well suited for applications that need excellent power density and exceptional efficiency due to its extraordinarily low on-resistance, which is unmatched among silicon-based Power MOSFETs.
Excellent switching performance
Easy to drive
100% avalanche tested
Worldwide best RDS(on) * area
Higher VDSS rating and high dv/dt capability
Switching applications
Small motor control
Switch Mode Power Supplies (SMPS)
Power-Over-Ethernet (PoE)
Solar inverters
Automotive applications
Please send RFQ , we will respond immediately.