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STF11NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STF11NM60ND
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 1151
- Description: STF11NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | FDmesh™ II |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STF11 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 25W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 90W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 450m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 10A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 50 ns |
| Continuous Drain Current (ID) | 10A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 25V |
| Drain-source On Resistance-Max | 0.45Ohm |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 40A |
| Avalanche Energy Rating (Eas) | 200 mJ |
| Height | 16.4mm |
| Length | 10.4mm |
| Width | 4.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
STF11NM60ND Description
The FDmeshTM II N-channel Power MOSFET STF11NM60ND has a low gate charge and input capacitance. This FDmesh II Power MOSFET is a member of the MDmeshTM technology's second generation. The company's strip architecture gains a new vertical structure thanks to its ground-breaking Power MOSFET, which also combines an internal rapid recovery body diode with all the benefits of low ON resistance and quick switching. For bridge topologies, in particular ZVS phase-shift converters, it is therefore highly advised.
STF11NM60ND Features
The worldwide best RDS (ON) area amongst the fast recovery diode device
100% Avalanche tested
Low gate input resistance
Extremely high dV/dt and avalanche capabilities
STF11NM60ND Applications
Industrial
Power Management
Switching applications
