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MOSFET (Metal Oxide) P-Channel Tube 160m Ω @ 5A, 10V ±20V 340pF @ 48V 6.4nC @ 10V TO-220-3 Full Pack
- Manufacturer: STMicroelectronics
- NO: 761-STF10P6F6
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 56106
- Description: MOSFET (Metal Oxide) P-Channel Tube 160m Ω @ 5A, 10V ±20V 340pF @ 48V 6.4nC @ 10V TO-220-3 Full Pack (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | DeepGATE™, STripFET™ VI |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STF10P |
| Number of Elements | 1 |
| Power Dissipation-Max | 20W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 20W |
| Case Connection | DRAIN |
| Turn On Delay Time | 64 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 160m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 48V |
| Current - Continuous Drain (Id) @ 25°C | 10A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 10V |
| Rise Time | 5.3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.7 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 10A |
| JEDEC-95 Code | TO-251 |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 7.2A |
| Drain-source On Resistance-Max | 0.16Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 40A |
| Avalanche Energy Rating (Eas) | 80 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lifecycle Status | NRND (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
