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ContactSTF10N95K5
STF10N95K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STF10N95K5
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 6092
- Description: STF10N95K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | SuperMESH5™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STF10N |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 30W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 800m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Drain to Source Voltage (Vdss) | 950V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 8A |
| JEDEC-95 Code | TO-247 |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain-source On Resistance-Max | 0.8Ohm |
| Pulsed Drain Current-Max (IDM) | 32A |
| DS Breakdown Voltage-Min | 950V |
| Avalanche Energy Rating (Eas) | 122 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STF10N95K5 Description
These N-channel Zener-protected Power MOSFETs were created utilizing ST's ground-breaking SuperMESHTM 5 technology, which is based on a ground-breaking patented vertical structure and is avalanche-rugged at very high voltage. The end result is a significantly lower on-resistance and extremely low gate charge for applications that demand a high power density.
STF10N95K5 Features
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
STF10N95K5 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
