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ContactSTD7N60M2
STD7N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STD7N60M2
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 8578
- Description: STD7N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | MDmesh™ II Plus |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 950mOhm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Base Part Number | STD7 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 60W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 60W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 950m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 271pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 10V |
| Rise Time | 7.2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 15.9 ns |
| Turn-Off Delay Time | 19.3 ns |
| Continuous Drain Current (ID) | 5A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Avalanche Energy Rating (Eas) | 99 mJ |
| Height | 2.4mm |
| Length | 6.6mm |
| Width | 6.2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STD7N60M2 Description
These devices STD7N60M2 are N-channel power MOSFET developed by MDMesh'M2 technology. Because of their ribbon layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, making them suitable for the most demanding high-efficiency converters.
STD7N60M2 Features
? Extremely low gate charge
? Excellent output capacitance (COSS) profile
? 100% avalanche tested
? Zener-protected
STD7N60M2 Applications
? Switching applications
