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ContactSTD6NF10T4
STD6NF10T4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STD6NF10T4
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 5889
- Description: STD6NF10T4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 250mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOW THRESHOLD |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 6A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STD6N |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 30W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 30W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 250m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 3A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 24A |
| Avalanche Energy Rating (Eas) | 200 mJ |
| Height | 2.4mm |
| Length | 6.6mm |
| Width | 6.2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STD6NF10T4 Description
This Power MOSFET series realized with STMicroelectronics's unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is, therefore, suitable as a primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
STD6NF10T4 Features
Exceptional dv/dt capability
100% avalanche tested
STD6NF10T4 Applications
Switching applications
