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STD4NK100Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STD4NK100Z
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 7905
- Description: STD4NK100Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | Automotive, AEC-Q101, SuperMESH™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STD4N |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 90W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 90W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.8 Ω @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 601pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 2.2A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 1kV |
| Pulsed Drain Current-Max (IDM) | 8.8A |
| Max Junction Temperature (Tj) | 150°C |
| Height | 2.63mm |
| RoHS Status | ROHS3 Compliant |
STD4NK100Z Description
STD4NK100Z is a 1000V Automotive-grade N-channel SuperMESH Power MOSFET. The STD4NK100Z is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH? technology, achieved through optimization of ST’s well-established strip-based PowerMESH? layout. In addition to a significant reduction in on-resistance, this STD4NK100Z is designed to ensure a high level of dv/dt capability for the most demanding applications.
STD4NK100Z Features
Designed for automotive applications and AEC-Q101 qualified
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
STD4NK100Z Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
