STD2N95K5

STD2N95K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-STD2N95K5
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 4324
  • Description: STD2N95K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH5™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STD2N95
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 105pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 13.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 32.5 ns
Turn-Off Delay Time 20.5 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 5Ohm
Drain to Source Breakdown Voltage 950V
Pulsed Drain Current-Max (IDM) 8A
Avalanche Energy Rating (Eas) 50 mJ
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g

STD2N95K5 Description


These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH? 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications that require superior power density and high efficiency.



STD2N95K5 Features


  • TO-220 worldwide best RDS(on)

  • Worldwide best FOM (figure of merit)

  • Ultra-low gate charge

  • 100% avalanche tested

  • Zener-protected



STD2N95K5 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


In Stock

Please send RFQ , we will respond immediately.