STD10PF06-1

MOSFET (Metal Oxide) P-Channel Tube 200m Ω @ 5A, 10V ±20V 850pF @ 25V 21nC @ 10V 60V TO-251-3 Short Leads, IPak, TO-251AA


  • Manufacturer: STMicroelectronics
  • NO: 761-STD10PF06-1
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: pdf
  • Stock: 3128
  • Description: MOSFET (Metal Oxide) P-Channel Tube 200m Ω @ 5A, 10V ±20V 850pF @ 25V 21nC @ 10V 60V TO-251-3 Short Leads, IPak, TO-251AA (Kg)

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SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tube
Series STripFET™ II
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 200mOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating -10A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD10
Pin Count 3
Number of Elements 1
Power Dissipation-Max 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 40A
Height 6.2mm
Length 6.6mm
Width 2.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

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