STB75NH02LT4

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 8m Ω @ 30A, 10V ±20V 2050pF @ 15V 22nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB


  • Manufacturer: STMicroelectronics
  • NO: 761-STB75NH02LT4
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: pdf
  • Stock: 1965
  • Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 8m Ω @ 30A, 10V ±20V 2050pF @ 15V 22nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)

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  • Payment: payment

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series STripFET™ III
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 75A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB75N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 80W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Rise Time 200ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.014Ohm
Drain to Source Breakdown Voltage 24V
Pulsed Drain Current-Max (IDM) 240A
Radiation Hardening No
RoHS Status Non-RoHS Compliant

In Stock

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