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STB60NF06LT4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STB60NF06LT4
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 7285
- Description: STB60NF06LT4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ II |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 16mOhm |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Additional Feature | LOW THRESHOLD, AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 245 |
| Current Rating | 60A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STB60N |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 110W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 110W |
| Case Connection | DRAIN |
| Turn On Delay Time | 35 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 14m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 66nC @ 4.5V |
| Rise Time | 220ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±15V |
| Fall Time (Typ) | 30 ns |
| Turn-Off Delay Time | 55 ns |
| Continuous Drain Current (ID) | 60A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 15V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 240A |
| Height | 4.6mm |
| Length | 10.4mm |
| Width | 9.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STB60NF06LT4 MOSFET Description
This Power MOSFET series has been specifically engineered to decrease input capacitance and gate charge using STMicroelectronics' unique STripFET technology. As a result, it is appropriate for use as the primary switch in sophisticated high efficient isolated DC-DC converters for telecom and computer applications. It is also intended for any application requiring a low gate charge drive.
STB60NF06LT4 MOSFET Features
Exceptional dv/dt capability
100% avalanche tested
Application-oriented characterization
175°C operating range
Low threshold drive
STB60NF06LT4 MOSFET Applications
Switching Applications
DC/DC Converters
Phase Circuits
Amplifiers
Analog Devices
Buffers
Choppers
