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ContactSTB55NF06LT4
STB55NF06LT4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STB55NF06LT4
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 1337
- Description: STB55NF06LT4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ II |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 18MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 245 |
| Current Rating | 55A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STB55N |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 95W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 95W |
| Case Connection | DRAIN |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 18m Ω @ 27.5A, 10V |
| Vgs(th) (Max) @ Id | 4.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 55A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 4.5V |
| Rise Time | 100ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V 5V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 55A |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 220A |
| Height | 4.6mm |
| Length | 10.75mm |
| Width | 10.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STB55NF06LT4 Description
STB55NF06LT4 is a 60V N-channel STripFET? II Power MOSFET. This Power MOSFET STB55NF06LT4 is the latest development of STMicroelectronic's unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STB55NF06LT4 Features
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Drain-source voltage (VGS = 0): 60V
Drain current (continuous) at TC = 25°C: 55A
Operating junction temperature Storage temperature: -55 to 175 °C
STB55NF06LT4 Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
