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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 90MOhm |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 245 |
| Current Rating | 16A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STB16N |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 45W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 45W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 90m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA (Min) |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 16A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Rise Time | 37ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 12.5 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 16A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 64A |
| Dual Supply Voltage | 60V |
| Nominal Vgs | 4 V |
| Height | 4.6mm |
| Length | 10.75mm |
| Width | 10.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STB16NF06LT4 belongs to the family of automotive-grade N-channel STripFET? power MOSFETs that are designed based on the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process. This process makes it able to provide excellent manufacturing reproducibility based on extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps.
Extremely high packing density
Low on-resistance
Rugged avalanche characteristics
Low gate charge
Available in the D2PAK package
Switching applications
Low-power electronics
Please send RFQ , we will respond immediately.