STB15N80K5

MOSFET N-Ch 800V 0.3Ohm typ SuperMESH V 14A


  • Manufacturer: STMicroelectronics
  • NO: 761-STB15N80K5
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: pdf
  • Stock: 8423
  • Description: MOSFET N-Ch 800V 0.3Ohm typ SuperMESH V 14A(Kg)

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SPECIFICATIONS

Parameters
Pulsed Drain Current-Max (IDM) 56A
Height 4.6mm
Length 10.4mm
Width 9.35mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series SuperMESH5™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Base Part Number STB15N
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 375m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 17.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V

In Stock

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