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STB13N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STB13N60M2
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 5542
- Description: STB13N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | MDmesh™ II Plus |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 380mOhm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Base Part Number | STB13N |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 110W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 110W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 380m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 11A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 9.5 ns |
| Turn-Off Delay Time | 41 ns |
| Continuous Drain Current (ID) | 11A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 650V |
| Pulsed Drain Current-Max (IDM) | 44A |
| Avalanche Energy Rating (Eas) | 125 mJ |
| Height | 4.6mm |
| Length | 10.4mm |
| Width | 9.35mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STB13N60M2 Description
The MDmeshTM M2 technology was used to build the STB13N60M2 N-channel Power MOSFETs. These devices have low on-resistance and optimal switching characteristics due to their strip layout and improved vertical structure, making them suited for the most demanding high-efficiency converters.
STB13N60M2 Features
? The gate charge is really low.
? Outstanding output capacitance profile (COSS)
? Avalanche-proofed to the nth degree
? Zener-secured
STB13N60M2 Applications
Switching applications
