SQM120N04-1M7L_GE3

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 1.7mOhm @ 30A, 10V ±20V 14606pF @ 20V 285nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB


  • Manufacturer: Vishay Siliconix
  • NO: 880-SQM120N04-1M7L_GE3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: pdf
  • Stock: 9786
  • Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 1.7mOhm @ 30A, 10V ±20V 14606pF @ 20V 285nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263
Weight 1.437803g
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2017
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Power Dissipation 375W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14606pF @ 20V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 285nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 74 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 14.606nF
Drain to Source Resistance 1.5mOhm
Rds On Max 1.7 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant

In Stock

Please send RFQ , we will respond immediately.