SQJ858AEP-T1_GE3

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.3mOhm @ 14A, 10V ±20V 2450pF @ 20V 55nC @ 10V 40V PowerPAK® SO-8


  • Manufacturer: Vishay Siliconix
  • NO: 880-SQJ858AEP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: pdf
  • Stock: 5109
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.3mOhm @ 14A, 10V ±20V 2450pF @ 20V 55nC @ 10V 40V PowerPAK® SO-8 (Kg)

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SPECIFICATIONS

Parameters
Current - Continuous Drain (Id) @ 25°C 58A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 58A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 2.45nF
Drain to Source Resistance 6.3mOhm
Rds On Max 6.3 mΩ
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Supplier Device Package PowerPAK® SO-8
Weight 506.605978mg
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 48W Tc
Element Configuration Single
Power Dissipation 48W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2450pF @ 20V

In Stock

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