SQD25N06-22L_GE3

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 22mOhm @ 20A, 10V ±20V 1975pF @ 25V 50nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63


  • Manufacturer: Vishay Siliconix
  • NO: 880-SQD25N06-22L_GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 12312
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 22mOhm @ 20A, 10V ±20V 1975pF @ 25V 50nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)

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SPECIFICATIONS

Parameters
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Input Capacitance 1.975nF
Drain to Source Resistance 22mOhm
Rds On Max 22 mΩ
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package TO-252, (D-Pak)
Weight 1.437803g
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 22mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 62W Tc
Element Configuration Single
Power Dissipation 62W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 25A

In Stock

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