SQ4401EY-T1_GE3

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 14mOhm @ 10.5A, 10V ±20V 4250pF @ 20V 115nC @ 10V 40V 8-SOIC (0.154, 3.90mm Width)


  • Manufacturer: Vishay Siliconix
  • NO: 880-SQ4401EY-T1_GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 10540
  • Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 14mOhm @ 10.5A, 10V ±20V 4250pF @ 20V 115nC @ 10V 40V 8-SOIC (0.154, 3.90mm Width) (Kg)

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SPECIFICATIONS

Parameters
Weight 506.605978mg
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 7.14W Tc
Element Configuration Single
Power Dissipation 1.8W
Turn On Delay Time 58 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 14mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4250pF @ 20V
Current - Continuous Drain (Id) @ 25°C 17.3A Tc
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
Rise Time 76ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 44 ns
Turn-Off Delay Time 67 ns
Continuous Drain Current (ID) 17.3A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Input Capacitance 4.25nF
Drain to Source Resistance 11mOhm
Rds On Max 14 mΩ
Nominal Vgs -2 V
Height 1.55mm
Length 5mm
Width 4mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO

In Stock

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