SQ3427EV-T1_GE3

SQ3427EV-T1_GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi


  • Manufacturer: Vishay Siliconix
  • NO: 880-SQ3427EV-T1_GE3
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 2143
  • Description: SQ3427EV-T1_GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Drain-source On Resistance-Max 0.095Ohm
DS Breakdown Voltage-Min 60V
Feedback Cap-Max (Crss) 80 pF
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 5W Tc
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 95m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 5.3A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
JEDEC-95 Code MO-193AA
Drain Current-Max (Abs) (ID) 5.3A

SQ3427EV-T1_GE3 Description


MOSFET for automobiles, P-Channel, 60 V (D-S), 175 °C



SQ3427EV-T1_GE3 Features


  • Power MOSFET TrenchFET

  • AEC-Q101 certified

  • Complete Rg and UIS testing



SQ3427EV-T1_GE3 Applications


Switching applications


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