SPW20N60C3FKSA1

SPW20N60C3FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-SPW20N60C3FKSA1
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 6583
  • Description: SPW20N60C3FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 40 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 208W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190m Ω @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.7A Tc
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-247AD
Drain Current-Max (Abs) (ID) 20.7A
Drain-source On Resistance-Max 0.19Ohm
Pulsed Drain Current-Max (IDM) 62.1A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 690 mJ
RoHS Status ROHS3 Compliant
SPW20N60C3FKSA1 Description The SPW20N60C3FKSA1 transistor falls in the category of N-Channel MOSFET. It's highly efficient and is designed for cost-effective solutions. With high speak current capability and extreme low ON resistance and low gate charge, the SPW20N60C3FKSA1 transistor can handle volateg up to 650 V drain to source. SPW20N60C3FKSA1 Features Extreme low gate charge High peak current sustainability High voltage Pb-free and RoHS compliant Ultra dv/dt rated SPW20N60C3FKSA1 Applications High power switching Industrial applications High speed switching HV technology Circuit protections Automotive applications

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