SPW11N80C3FKSA1

SPW11N80C3FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-SPW11N80C3FKSA1
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 9483
  • Description: SPW11N80C3FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 156W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 7.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 100V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.45Ohm
Pulsed Drain Current-Max (IDM) 33A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 470 mJ
RoHS Status ROHS3 Compliant

SPW11N80C3FKSA1 Description


SPW11N80C3FKSA1 is a CoolMOSTM Power Transistor manufactured by Infineon. The 800V CoolMOSTM is designed for  Industrial application with high DC bulk voltage and Switching Application (i.e. active clamp forward). And the main parameters of SPW11N80C3FKSA1 are Power MOSFET, General Purpose, N Channel, 800 V, 11 A, 0.39 ohm, TO-247, and Through Hole. What's more, the SPW11N80C3FKSA1 operates within ambient temperatures from -55 to 150°C and with a power dissipation of 156W. 



SPW11N80C3FKSA1 Features


  • Low specific on-state resistance (RDS(on)*A)

  • Very low energy storage in output capacitance (Eoss) @400V

  • Low gate charge (Qg)

  • Fieldproven CoolMOS? quality

  • CoolMOS? technology has been manufactured by Infineon since 1998



SPW11N80C3FKSA1 Applications


  • Lighting

  • Solar

  • Consumer

  • PC power

  • Adapter


In Stock

Please send RFQ , we will respond immediately.