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SPP20N60C3XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-SPP20N60C3XKSA1
- Package: TO-220-3
- Datasheet:
- Stock: 704
- Description: SPP20N60C3XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Packaging | Tube |
| Published | 2005 |
| Series | CoolMOS™ |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | Through Hole |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 650V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 20.7A |
| Power Dissipation-Max | 208W Tc |
| Element Configuration | Single |
| Power Dissipation | 208W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4.5 ns |
| Turn-Off Delay Time | 67 ns |
| Continuous Drain Current (ID) | 20.7A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 600V |
| Dual Supply Voltage | 650V |
| Input Capacitance | 2.4nF |
| Drain to Source Resistance | 190mOhm |
| Rds On Max | 190 mΩ |
| Nominal Vgs | 3 V |
| Height | 9.25mm |
| Length | 10mm |
| Width | 4.4mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Supplier Device Package | PG-TO220-3-1 |
| Weight | 45.359237g |
| Operating Temperature | -55°C~150°C TJ |
SPP20N60C3XKSA1 MOSFET Description
The industry is familiar with Infineon's CoolMOSTM super junction MOSFET technology, which stands out for its excellent quality and dependability. Over the past few years, the quality has been demonstrated by the billions of devices sold with continuously improving DPM of less than 0.05 DPM. Regarding dependability, the same performance has been demonstrated to be accurate to less than 0.1 FIT over 175 million device hours. With its design-for-quality program and ongoing manufacturing improvement, Infineon has always taken solid, tested steps. To achieve this, teams from technology, design, quality, reliability, and manufacturing work together continuously and pro-actively. Above the fact that all Infineon facilities have ISO/TS16949 certification, this endeavor goes above and beyond.
SPP20N60C3XKSA1 MOSFET Features
New revolutionary high voltage technology
Worldwide best Rps(on) in TO-220
Ultra-low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
PG-T0-220-3-31: Fully isolated package (2500 VAC; 1min)
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC0 for target applications
SPP20N60C3XKSA1 MOSFET Applications
Server
PC Power
Solar Inverters
UPS
EV-Charging
LED Lighting
Home Appliance Drivers
