SPP16N50C3XKSA1

SPP16N50C3XKSA1 Overview

A device's maximum input capacitance is 1600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=560V, and this device has a drain-to-source breakdown voltage of 560V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 50 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 250mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 500V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 560V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

SPP16N50C3XKSA1 Features

a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 560V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 250mOhm
a 560V drain to source voltage (Vdss)

SPP16N50C3XKSA1 Applications

There are a lot of Infineon Technologies
SPP16N50C3XKSA1 applications of single MOSFETs transistors.

• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.
• DC-to-DC converters