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| Parameters | |
|---|---|
| Case Connection | DRAIN |
| Halogen Free | Not Halogen Free |
| Power Dissipation | 125W |
| Turn On Delay Time | 13 ns |
| Max Dual Supply Voltage | -60V |
| Power Dissipation-Max | 125W Tc |
| Continuous Drain Current (ID) | 30A |
| Drain-source On Resistance-Max | 0.075Ohm |
| Turn-Off Delay Time | 30 ns |
| Transistor Element Material | SILICON |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 75m Ω @ 21.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1.7mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1535pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Rise Time | 11ns |
| Fall Time (Typ) | 20 ns |
| Gate to Source Voltage (Vgs) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
| Drain to Source Voltage (Vdss) | 60V |
| Avalanche Energy Rating (Eas) | 250 mJ |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| Series | SIPMOS® |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Number of Pins | 3 |
| Additional Feature | AVALANCHE RATED |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Reach Compliance Code | not_compliant |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~175°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
Product Description: SPD30P06PGBTMA1
The SPD30P06PGBTMA1 is a Power MOSFET manufactured by Infineon Technologies. It is designed to deliver high-performance switching characteristics and is part of the OptiMOS™ P2 series. This MOSFET is specifically optimized for power electronics applications that require high power handling and efficiency.
Features:
High Power Handling: The SPD30P06PGBTMA1 MOSFET is capable of handling high power levels, making it suitable for power electronics applications that demand robust performance.
Low On-State Resistance (RDS(on)): This MOSFET has a low RDS(on) value, which results in reduced conduction losses and improved energy efficiency.
Fast Switching Speed: The SPD30P06PGBTMA1 features fast switching characteristics, enabling efficient handling of high-frequency switching operations.
Avalanche Energy Rated: The MOSFET is designed to withstand avalanche energy, ensuring its reliability and safety during high-voltage transient conditions.
Enhanced Thermal Performance: The MOSFET comes with advanced thermal properties that allow it to efficiently dissipate heat, ensuring stable operation under high-power conditions.
High Breakdown Voltage: The SPD30P06PGBTMA1 has a high voltage rating, making it suitable for applications that require high-voltage switching.
RoHS Compliant: This MOSFET is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring its environmental friendliness.
Applications:
The SPD30P06PGBTMA1 MOSFET finds applications in a wide range of power electronics applications that require efficient high-power switching. Some of the typical applications include:
Power Supplies: It is used in power supply circuits, including AC-DC converters and DC-DC converters, to improve energy efficiency and power handling capabilities.
Motor Drives: The MOSFET is employed in motor drive circuits for controlling and driving electric motors in industrial, automotive, and consumer applications.
Inverters: It finds applications in inverters used in renewable energy systems (e.g., solar inverters) and motor drives for converting DC power to AC power.
Switching Converters: The SPD30P06PGBTMA1 is used in various switching converter topologies like buck, boost, and flyback to efficiently regulate and convert voltage levels.
Uninterruptible Power Supplies (UPS): It is used in UPS systems to switch between mains power and battery backup during power outages.
LED Lighting: The MOSFET is employed in LED lighting applications to control the current flow and achieve high-efficiency lighting solutions.
Audio Amplifiers: It is used in high-power audio amplifiers to deliver high-quality audio signals with low distortion.
Industrial Automation: The SPD30P06PGBTMA1 is used in industrial automation equipment for switching and control applications.
In summary, the SPD30P06PGBTMA1 is a high-power MOSFET with low on-state resistance, fast switching speed, and enhanced thermal performance. It is well-suited for various power electronics applications, including power supplies, motor drives, inverters, and switching converters. With its reliable performance and efficient power handling, the SPD30P06PGBTMA1 contributes to the development of advanced and energy-efficient electronic systems.
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