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SPB17N80C3ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-SPB17N80C3ATMA1
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 8673
- Description: SPB17N80C3ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 227W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 290m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 17A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 177nC @ 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 17A |
| Drain-source On Resistance-Max | 0.29Ohm |
| Pulsed Drain Current-Max (IDM) | 51A |
| DS Breakdown Voltage-Min | 800V |
| Avalanche Energy Rating (Eas) | 670 mJ |
| RoHS Status | ROHS3 Compliant |
SPB17N80C3ATMA1 Description
The SPB17N80C3 is a CoolMOSTM N-channel Power MOSFET with an ultra-low gate current that operates at 800V. It's made for switching and high DC bulk voltage applications.
SPB17N80C3ATMA1 Features
new revolutionary high voltage technology
Extreme dv/dt rated
High peak current capability
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Ultra-low gate charge
Ultra-low effective capacitances
High efficiency and power density
Outstanding cost/performance
High reliability
Ease-of-use
SPB17N80C3ATMA1 Applications
Industrial application with high DC bulk voltage
Switching Application (i.e. active clamp forward)
Consumer
PC power
Adapter
Lighting
Solar
