SPB17N80C3

SPB17N80C3 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 670 mJ.This device has a continuous drain current (ID) of [17A], which is its maximum continuous current.It is [72 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 250mOhm exists between the drain and source.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.The maximum dual supply voltage can be supported by 800V.This transistor requires a drain-source voltage (Vdss) of 800V.

SPB17N80C3 Features

the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 17A
the turn-off delay time is 72 ns
single MOSFETs transistor is 250mOhm
a 800V drain to source voltage (Vdss)

SPB17N80C3 Applications

There are a lot of Infineon SPB17N80C3 applications of single MOSFETs transistors.

• PFC stages, hard switching PWM stages and resonant switching
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• DC-to-DC converters
• AC-DC Power Supply
• Power Management Functions
• Telecom 1 Sever Power Supplies
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• LCD/LED/ PDP TV Lighting
• Uninterruptible Power Supply
• Solar Inverter