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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Voltage - Rated DC | 800V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 11A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Voltage | 800V |
| Power Dissipation-Max | 34W Tc |
| Element Configuration | Single |
| Current | 11A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 41W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 25 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 450m Ω @ 7.1A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 680μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 11A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 72 ns |
| Continuous Drain Current (ID) | 11A |
| Threshold Voltage | 3V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.45Ohm |
| Drain to Source Breakdown Voltage | 800V |
| Avalanche Energy Rating (Eas) | 470 mJ |
| Height | 9.83mm |
| Length | 10.65mm |
| Width | 4.85mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
SPA11N80C3XKSA1 is a power transistor which is a kind of transistor used in high power amplifier and power supply. Power transistors are suitable for applications where current and voltage are widely used. It is a junction transistor designed to handle high current and high power, as well as audio and switching circuits.
? New revolutionary high voltage technology
? Extreme dv/dt rated
? High peak current capability
? Qualified according to JEDEC1) for target applications
? Pb-free lead plating; RoHS compliant
? Ultra low gate charge
? Ultra low effective capacitances
? Fully isolated package (2500 VAC; 1 minute)
CoolMOSTM 800V designed for:
? Industrial application with high DC bulk voltage
? Switching Application ( i.e. active clamp forward )
high current
high power audio
switching circuits
Please send RFQ , we will respond immediately.