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ContactSN7002NH6327XTSA2
SN7002NH6327XTSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-SN7002NH6327XTSA2
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1253
- Description: SN7002NH6327XTSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Halogen Free | Halogen Free |
| Element Configuration | Single |
| Power Dissipation | 360mW |
| Turn On Delay Time | 2.4 ns |
| Threshold Voltage | 1.4V |
| Max Dual Supply Voltage | 60V |
| Power Dissipation-Max | 360mW Ta |
| Continuous Drain Current (ID) | 200mA |
| Max Junction Temperature (Tj) | 150°C |
| Drain-source On Resistance-Max | 5Ohm |
| Turn-Off Delay Time | 5.3 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 26μA |
| Input Capacitance (Ciss) (Max) @ Vds | 45pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 10V |
| Rise Time | 3.2ns |
| Fall Time (Typ) | 3.6 ns |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Drain Current-Max (Abs) (ID) | 0.2A |
| Current - Continuous Drain (Id) @ 25°C | 200mA Ta |
| Feedback Cap-Max (Crss) | 4.2 pF |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Series | Automotive, AEC-Q101, SIPMOS® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Length | 2.9mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| Number of Pins | 3 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| REACH SVHC | No SVHC |
| Height | 1.1mm |
| Width | 1.3mm |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
| Terminal Finish | Tin (Sn) |
SPD15P10PLGBTMA1 Description
Infineon's OptiMOSTM series of power MOSFETs includes P-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key criteria for power system design, such as on-state resistance and figure of merit characteristics. This product is designed for general use and can be used to a variety of settings.
SPD15P10PLGBTMA1 Features
N-Channel
Mode of enhancement
Level of Logic
dv/dt
According to AEC Q101, you are qualified.
SPD15P10PLGBTMA1 Applications
Switching applications
