SISS64DN-T1-GE3

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.1m Ω @ 10A, 10V +20V, -16V 3420pF @ 15V 68nC @ 10V PowerPAK® 1212-8S


  • Manufacturer: Vishay Siliconix
  • NO: 880-SISS64DN-T1-GE3
  • Package: PowerPAK® 1212-8S
  • Datasheet: pdf
  • Stock: 15805
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.1m Ω @ 10A, 10V +20V, -16V 3420pF @ 15V 68nC @ 10V PowerPAK® 1212-8S (Kg)

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SPECIFICATIONS

Parameters
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 57W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.8W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3420pF @ 15V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 37A
Drain Current-Max (Abs) (ID) 40A
Drain-source On Resistance-Max 0.00286Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 45 mJ
Max Junction Temperature (Tj) 150°C
Height 1.17mm
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8S
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET® Gen IV
Published 2018
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)

In Stock

Please send RFQ , we will respond immediately.