SIHG47N60E-GE3

MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIHG47N60E-GE3
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 5816
  • Description: MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS(Kg)

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  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247AC
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 64mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 357W Tc
Element Configuration Single
Power Dissipation 357W
Turn On Delay Time 24 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 64mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 100V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 47A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 9.62nF
Drain to Source Resistance 64mOhm
Rds On Max 64 mΩ
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

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