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SIB452DK-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi
- Manufacturer: Vishay Siliconix
- NO: 880-SIB452DK-T1-GE3
- Package: PowerPAK® SC-75-6L
- Datasheet:
- Stock: 9822
- Description: SIB452DK-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.4 Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 135pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 10V |
| Rise Time | 16ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 1.5A |
| Threshold Voltage | 1.5V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 190V |
| Height | 750μm |
| Length | 1.6mm |
| Width | 1.6mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-75-6L |
| Number of Pins | 6 |
| Weight | 95.991485mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 2.4Ohm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.4W Ta 13W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.4W |
| Case Connection | DRAIN |
SIB452DK-T1-GE3 Description
The SIB452DK-T1-GE3 is an N-Channel 190 V (D-S) MOSFET. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly the same thing as a MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.
SIB452DK-T1-GE3 Features
TrenchFET® power MOSFET
New thermally enhanced PowerPAK® SC-75 package
- Small footprint area
- Low on-resistance
High current: The same tendency as for low ON resistance.
High Speed: U-MOS is disadvantageous for high-speed switching because of large gate capacity (Ciss).
Withstand voltage: The optimum structure is selected for the target withstand voltage.
Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that.
SIB452DK-T1-GE3 Applications
Boost converter for portable devices
Automotive
Industrial
Communications systems in particular
Automotive electronics
Switching devices in electronic control units
Power converters in modern electric vehicles
