SIB433EDK-T1-GE3

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 58mOhm @ 3.7A, 4.5V ±8V 21nC @ 8V 20V PowerPAK® SC-75-6L


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIB433EDK-T1-GE3
  • Package: PowerPAK® SC-75-6L
  • Datasheet: pdf
  • Stock: 53173
  • Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 58mOhm @ 3.7A, 4.5V ±8V 21nC @ 8V 20V PowerPAK® SC-75-6L (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-75-6L
Number of Pins 6
Supplier Device Package PowerPAK® SC-75-6L Single
Weight 95.991485mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 58mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta 13W Tc
Element Configuration Single
Power Dissipation 2.4W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 58mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 8V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) -9A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Drain to Source Resistance 47mOhm
Rds On Max 58 mΩ
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.