SIAA40DJ-T1-GE3

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 12.5m Ω @ 5A, 10V +20V, -16V 1200pF @ 20V 12nC @ 4.5V 40V PowerPAK® SC-70-6


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIAA40DJ-T1-GE3
  • Package: PowerPAK® SC-70-6
  • Datasheet: pdf
  • Stock: 4272
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 12.5m Ω @ 5A, 10V +20V, -16V 1200pF @ 20V 12nC @ 4.5V 40V PowerPAK® SC-70-6 (Kg)

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SPECIFICATIONS

Parameters
Power Dissipation-Max 19.2W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.5m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 20V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.016Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 5 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET® Gen IV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE

In Stock

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