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ContactSIA850DJ-T1-GE3
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.8 Ω @ 360mA, 4.5V ±16V 90pF @ 100V 4.5nC @ 10V PowerPAK® SC-70-6 Dual
- Manufacturer: Vishay Siliconix
- NO: 880-SIA850DJ-T1-GE3
- Package: PowerPAK® SC-70-6 Dual
- Datasheet:
- Stock: 10703
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.8 Ω @ 360mA, 4.5V ±16V 90pF @ 100V 4.5nC @ 10V PowerPAK® SC-70-6 Dual (Kg)
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| Parameters | |
|---|---|
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 950mA |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 0.95A |
| Drain to Source Breakdown Voltage | 190V |
| FET Feature | Schottky Diode (Isolated) |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | LITTLE FOOT® |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.9W Ta 7W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 7W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.8 Ω @ 360mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 90pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 950mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 10V |
