SIA416DJ-T1-GE3

MOSFET (Metal Oxide) N-Channel Digi-Reel® 83m Ω @ 3.2A, 10V ±20V 295pF @ 50V 10nC @ 10V PowerPAK® SC-70-6


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIA416DJ-T1-GE3
  • Package: PowerPAK® SC-70-6
  • Datasheet: pdf
  • Stock: 2277
  • Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 83m Ω @ 3.2A, 10V ±20V 295pF @ 50V 10nC @ 10V PowerPAK® SC-70-6 (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2013
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 83MOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 83m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 50V
Current - Continuous Drain (Id) @ 25°C 11.3A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 100ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 11.3A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 0.45 mJ
Height 750μm
Length 2.05mm
Width 2.05mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

SIA416DJ-T1-GE3 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 0.45 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 295pF @ 50V.This device's continuous drain current (ID) is 11.3A, which represents the maximum continuous current it can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1.6V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SIA416DJ-T1-GE3 Features


the avalanche energy rating (Eas) is 0.45 mJ
a continuous drain current (ID) of 11.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
a threshold voltage of 1.6V

SIA416DJ-T1-GE3 Applications


There are a lot of Vishay Siliconix SIA416DJ-T1-GE3 applications of single MOSFETs transistors.

  • Telecom 1 Sever Power Supplies
  • Server power supplies
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • PFC stages, hard switching PWM stages and resonant switching
  • Consumer Appliances
  • Lighting, Server, Telecom and UPS.
  • LCD/LED TV
  • Motor Drives and Uninterruptible Power Supples
  • AC-DC Power Supply
  • Industrial Power Supplies

In Stock

Please send RFQ , we will respond immediately.