SIA400EDJ-T1-GE3

Single N-Channel 30 V 0.025 Ohm 17.4 nC 3.5 W Silicon Mosfet - POWERPAK-SC-70-6L


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIA400EDJ-T1-GE3
  • Package: PowerPAK® SC-70-6
  • Datasheet: pdf
  • Stock: 1997
  • Description: Single N-Channel 30 V 0.025 Ohm 17.4 nC 3.5 W Silicon Mosfet - POWERPAK-SC-70-6L(Kg)

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SPECIFICATIONS

Parameters
Power Dissipation-Max 19.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 11A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1265pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 30A
Height 750μm
Length 2.05mm
Width 2.05mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 6
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Channels 1

In Stock

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