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MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 55mOhm @ 1A, 4.5V ±8V 21nC @ 4.5V 12V 4-XFBGA, CSPBGA
- Manufacturer: Vishay Siliconix
- NO: 880-SI8405DB-T1-E3
- Package: 4-XFBGA, CSPBGA
- Datasheet:
- Stock: 9578
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 55mOhm @ 1A, 4.5V ±8V 21nC @ 4.5V 12V 4-XFBGA, CSPBGA (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-XFBGA, CSPBGA |
| Number of Pins | 4 |
| Supplier Device Package | 4-Microfoot |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.47W Ta |
| Element Configuration | Single |
| Power Dissipation | 2.77W |
| Turn On Delay Time | 16 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 3.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
| Rise Time | 32ns |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 32 ns |
| Turn-Off Delay Time | 120 ns |
| Continuous Drain Current (ID) | -3.6A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 55mOhm |
| Rds On Max | 55 mΩ |
| Height | 360μm |
| Length | 1.6mm |
| Width | 1.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
