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ContactSI7792DP-T1-GE3
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.1m Ω @ 20A, 10V ±20V 4.735nF @ 15V 135nC @ 10V 30V PowerPAK® SO-8
- Manufacturer: Vishay Siliconix
- NO: 880-SI7792DP-T1-GE3
- Package: PowerPAK® SO-8
- Datasheet:
- Stock: 9486
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.1m Ω @ 20A, 10V ±20V 4.735nF @ 15V 135nC @ 10V 30V PowerPAK® SO-8 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 22 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | SkyFET®, TrenchFET® Gen III |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-C5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 6.25W Ta 104W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.1m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4.735nF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 40.6A Ta 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 60A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0021Ohm |
| Pulsed Drain Current-Max (IDM) | 100A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 125 mJ |
| FET Feature | Schottky Diode (Body) |
| RoHS Status | ROHS3 Compliant |
