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ContactSI7615CDN-T1-GE3
SI7615CDN-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi
- Manufacturer: Vishay Siliconix
- NO: 880-SI7615CDN-T1-GE3
- Package: PowerPAK® 1212-8
- Datasheet:
- Stock: 2000
- Description: SI7615CDN-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® Gen III |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Power Dissipation-Max | 33W Tc |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 12A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3860pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| RoHS Status | ROHS3 Compliant |
SI7615CDN-T1-GE3 Description
Metal Oxide Silicon Field Effect Transistors commonly known as MOSFETs are electronic devices used to switch or amplify voltages in circuits. It is a voltage controlled device and is constructed by three terminals. The terminals of MOSFET are named as follows: Source.
SI7615CDN-T1-GE3 FEATURES
• TrenchFET® Gen III p-channel power MOSFET
• RDS(on) rating at VGS = -1.8 V
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
SI7615CDN-T1-GE3 APPLICATIONS
• Battery management in mobile devices
• Battery switch
• Load switch
