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ContactSI7495DP-T1-GE3
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 6.5m Ω @ 21A, 4.5V ±8V 140nC @ 5V 12V PowerPAK® SO-8
- Manufacturer: Vishay Siliconix
- NO: 880-SI7495DP-T1-GE3
- Package: PowerPAK® SO-8
- Datasheet:
- Stock: 1530
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 6.5m Ω @ 21A, 4.5V ±8V 140nC @ 5V 12V PowerPAK® SO-8 (Kg)
- Delivery:
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| Parameters | |
|---|---|
| Package / Case | PowerPAK® SO-8 |
| Weight | 506.605978mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2013 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 6.5mOhm |
| Terminal Finish | PURE MATTE TIN |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.8W Ta |
| Element Configuration | Single |
| Turn On Delay Time | 100 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 6.5m Ω @ 21A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 1mA |
| Current - Continuous Drain (Id) @ 25°C | 13A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 5V |
| Rise Time | 200ns |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 230 ns |
| Turn-Off Delay Time | 350 ns |
| Continuous Drain Current (ID) | 13A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -12V |
| Height | 1.04mm |
| Length | 4.9mm |
| Width | 5.89mm |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
