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ContactSI7469DP-T1-E3
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 25m Ω @ 10.2A, 10V ±20V 4700pF @ 40V 160nC @ 10V PowerPAK® SO-8
- Manufacturer: Vishay Siliconix
- NO: 880-SI7469DP-T1-E3
- Package: PowerPAK® SO-8
- Datasheet:
- Stock: 44969
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 25m Ω @ 10.2A, 10V ±20V 4700pF @ 40V 160nC @ 10V PowerPAK® SO-8 (Kg)
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| Parameters | |
|---|---|
| Height | 1.12mm |
| Length | 4.9mm |
| Width | 5.89mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Number of Pins | 8 |
| Weight | 506.605978mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 25MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-C5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Voltage | 80V |
| Power Dissipation-Max | 5.2W Ta 83.3W Tc |
| Element Configuration | Single |
| Current | 27A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 83W |
| Case Connection | DRAIN |
| Turn On Delay Time | 45 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 25m Ω @ 10.2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4700pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 28A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
| Rise Time | 220ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 110 ns |
| Turn-Off Delay Time | 95 ns |
| Continuous Drain Current (ID) | -28A |
| Threshold Voltage | -10V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -80V |
| Max Junction Temperature (Tj) | 150°C |
