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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 16mOhm @ 7.6A, 4.5V ±12V 1600pF @ 10V 55nC @ 10V 20V PowerPAK® ChipFET™ Single
- Manufacturer: Vishay Siliconix
- NO: 880-SI5484DU-T1-GE3
- Package: PowerPAK® ChipFET™ Single
- Datasheet:
- Stock: 4853
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 16mOhm @ 7.6A, 4.5V ±12V 1600pF @ 10V 55nC @ 10V 20V PowerPAK® ChipFET™ Single (Kg)
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| Parameters | |
|---|---|
| Height | 750μm |
| Length | 3mm |
| Width | 1.9mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® ChipFET™ Single |
| Number of Pins | 8 |
| Supplier Device Package | PowerPAK® ChipFet Single |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.1W Ta 31W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 7.6A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 12A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Input Capacitance | 1.6nF |
| Drain to Source Resistance | 16mOhm |
| Rds On Max | 16 mΩ |
