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ContactSI4890DY-T1-GE3
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 12m Ω @ 11A, 10V ±25V 20nC @ 5V 8-SOIC (0.154, 3.90mm Width)
- Manufacturer: Vishay Siliconix
- NO: 880-SI4890DY-T1-GE3
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 10575
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 12m Ω @ 11A, 10V ±25V 20nC @ 5V 8-SOIC (0.154, 3.90mm Width) (Kg)
- Delivery:
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 186.993455mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2015 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 12m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 800mV @ 250μA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| Rise Time | 8.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 17 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 11A |
| Threshold Voltage | 10V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 50A |
| REACH SVHC | Unknown |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
