SI4403CDY-T1-GE3

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 15.5mOhm @ 9A, 4.5V ±8V 2380pF @ 10V 90nC @ 8V 20V 8-SOIC (0.154, 3.90mm Width)


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI4403CDY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 9176
  • Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 15.5mOhm @ 9A, 4.5V ±8V 2380pF @ 10V 90nC @ 8V 20V 8-SOIC (0.154, 3.90mm Width) (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 506.605978mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 15.5mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5W Tc
Power Dissipation 2.5W
Turn On Delay Time 7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 15.5mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2380pF @ 10V
Current - Continuous Drain (Id) @ 25°C 13.4A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 8V
Rise Time 18ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 108 ns
Continuous Drain Current (ID) 13.4A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Input Capacitance 2.38nF
Drain to Source Resistance 15.5mOhm
Rds On Max 15.5 mΩ
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

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