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ContactSI3493DV-T1-E3
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 27mOhm @ 7A, 4.5V ±8V 32nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
- Manufacturer: Vishay Siliconix
- NO: 880-SI3493DV-T1-E3
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 12998
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 27mOhm @ 7A, 4.5V ±8V 32nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6 (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Supplier Device Package | 6-TSOP |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2008 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 27mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 1.1W Ta |
| Element Configuration | Single |
| Power Dissipation | 1.9W |
| Turn On Delay Time | 20 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 5.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 4.5V |
| Rise Time | 40ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 40 ns |
| Turn-Off Delay Time | 125 ns |
| Continuous Drain Current (ID) | 5.3A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 27mOhm |
| Rds On Max | 27 mΩ |
| Height | 990.6μm |
| Length | 3.0988mm |
| Width | 1.7018mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
