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ContactSI3477DV-T1-GE3
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 17.5mOhm @ 9A, 4.5V ±10V 2600pF @ 6V 90nC @ 10V 12V SOT-23-6 Thin, TSOT-23-6
- Manufacturer: Vishay Siliconix
- NO: 880-SI3477DV-T1-GE3
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 27153
- Description: MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 17.5mOhm @ 9A, 4.5V ±10V 2600pF @ 6V 90nC @ 10V 12V SOT-23-6 Thin, TSOT-23-6 (Kg)
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- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Supplier Device Package | 6-TSOP |
| Weight | 19.986414mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2017 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 17.5mOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2W Ta 4.2W Tc |
| Power Dissipation | 2W |
| Turn On Delay Time | 10 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 9A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 30 ns |
| Turn-Off Delay Time | 65 ns |
| Continuous Drain Current (ID) | 8A |
| Gate to Source Voltage (Vgs) | 10V |
| Drain to Source Breakdown Voltage | -12V |
| Input Capacitance | 2.6nF |
| Drain to Source Resistance | 17.5mOhm |
| Rds On Max | 17.5 mΩ |
| Nominal Vgs | -400 mV |
| REACH SVHC | Unknown |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
