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ContactSI3460DV-T1-GE3
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 27m Ω @ 5.1A, 4.5V ±8V 20nC @ 4.5V SOT-23-6 Thin, TSOT-23-6
- Manufacturer: Vishay Siliconix
- NO: 880-SI3460DV-T1-GE3
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 1387
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 27m Ω @ 5.1A, 4.5V ±8V 20nC @ 4.5V SOT-23-6 Thin, TSOT-23-6 (Kg)
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| Parameters | |
|---|---|
| Turn-Off Delay Time | 70 ns |
| Continuous Drain Current (ID) | 6.8A |
| Threshold Voltage | 450mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain-source On Resistance-Max | 0.027Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Nominal Vgs | 450 mV |
| REACH SVHC | Unknown |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 19.986414mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 27m Ω @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) |
| Current - Continuous Drain (Id) @ 25°C | 5.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Rise Time | 30ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 30 ns |
