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ContactSI3457DV
SI3457DV datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-SI3457DV
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 711
- Description: SI3457DV datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 50MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -4A |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.6W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.6W |
| Turn On Delay Time | 7 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 5V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 4A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain to Source Breakdown Voltage | -30V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
Description
The SI3457DV is a single P-Channel logic level PowerTrench? MOSFET. The sophisticated PowerTrench technique used by Fairchild to make this P-Channel Logic Level MOSFET. For battery power management applications, it has been optimized.
Features
–4 A, –30 V. RDS(ON) = 50 m? @ VGS = –10 V
RDS(ON) = 75 m? @ VGS = –4.5 V
Low gate charge
High performance trench technology for extremely low RDS(ON)
Low on-resistance
High current, high speed
Applications
Battery management
Load switch
Battery protection
Automotive electronics
Power converters
